SSM3K303T - Toshiba Semiconductor

SSM3K303T Silicon N-Channel MOSFET

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain–source voltage VDS 30 V Gate–source voltage VGSS ±.

Features

ing Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) Characteristic Drain
  –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain
  –source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge .