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SSM3K329R |
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| Part Number | SSM3K329R |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MOSFETs Silicon N-Channel MOS SSM3K329R 1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 ... |
| Features |
(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)
3. Packaging and Internal Circuit
SOT-23F
SSM3K329R
1: Gate 2: Source 3: Drain
©2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2010-02
2021-10-22 Rev.1.0
SSM3K329R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
30
V
VGSS
±12
V
Drain current (DC)
(Not... |
| Document |
 SSM3K329R Data Sheet
PDF 410.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM3K320T |
Toshiba |
Silicon N-Channel MOSFET |
|
| 2 | SSM3K324R |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | SSM3K301T |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | SSM3K302T |
Toshiba Semiconductor |
Power Management Switch Applications |
|
| 5 | SSM3K303T |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|