SSM3K301T - Toshiba Semiconductor

SSM3K301T Silicon N-Channel MOSFET

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Ron = 110 mΩ (max) (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V) Ron = 56 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Unit: mm Characteri.

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m ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-3S1A Weight: 10 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source ON-resistance In.