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SSM3K303T |
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| Part Number | SSM3K303T |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@... |
| Features |
ing Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
JEDEC
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JEITA
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TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Characteristic Drain –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain –source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge ... |
| Document |
 SSM3K303T Data Sheet
PDF 234.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM3K301T |
Toshiba Semiconductor |
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| 2 | SSM3K302T |
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| 3 | SSM3K309T |
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| 4 | SSM3K310T |
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| 5 | SSM3K315T |
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