SSM3J378R - Toshiba

SSM3J378R Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J378R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) R.

Features

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SSM3J378R 1. Gate 2. Source 3. Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J378R,LF SSM3J378R,LXGF SSM3J378R,LXHF
� YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our .