These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trenc.
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J H G K F E REF. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATIO.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG4390N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SSG4394N |
SeCoS Halbleitertechnologie |
N-Channel Enhancement Mode Power MOSFET | |
3 | SSG4362N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SSG4224 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
5 | SSG4226 |
SeCoS |
N-Channel MOSFET | |
6 | SSG4228 |
SeCoS |
Dual-N Enhancement Mode Power MOSFET | |
7 | SSG42N60 |
Solid States Devices |
50 AMP 600 VOLTS FAST POWER IGBT | |
8 | SSG4401P |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
9 | SSG4402N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
10 | SSG4403 |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
11 | SSG4406F-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
12 | SSG4407 |
SeCoS |
P-Channel Enhancement Mode Power MosFET |