The SSG4224 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features * Dual N MOSFET Package * Simple Drive Requirement * Low On-Resistance D1 D1 D2 D2 8 765 Date Code 4224SS 123 4 S1 G1 S2 G2 SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 45o 0.375 REF 3.80 4.00 0.35 1..
* Dual N MOSFET Package
* Simple Drive Requirement
* Low On-Resistance
D1 D1 D2 D2 8 765
Date Code
4224SS
123 4 S1 G1 S2 G2
SOP-8
0.40 0.90
6.20 5.80
0.25
0.19 0.25
45o 0.375 REF
3.80 4.00
0.35 1.27Typ. 0.49 4.80 0.100.25
5.00
0o
1.35 1.75
8o
Dimensions in millimeters
D1 D2
G1 G2 S1 S2
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID@TA=25 oC ID@TA=70 oC
IDM PD@TA=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG4226 |
SeCoS |
N-Channel MOSFET | |
2 | SSG4228 |
SeCoS |
Dual-N Enhancement Mode Power MOSFET | |
3 | SSG42N60 |
Solid States Devices |
50 AMP 600 VOLTS FAST POWER IGBT | |
4 | SSG4362N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
5 | SSG4390N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
6 | SSG4394N |
SeCoS Halbleitertechnologie |
N-Channel Enhancement Mode Power MOSFET | |
7 | SSG4396N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
8 | SSG4401P |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
9 | SSG4402N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
10 | SSG4403 |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
11 | SSG4406F-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
12 | SSG4407 |
SeCoS |
P-Channel Enhancement Mode Power MosFET |