These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. APPL.
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13’ inch SOP-8 B A H G LD M C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Milli.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG4402N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SSG4403 |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
3 | SSG4406F-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SSG4407 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
5 | SSG4407J-C |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
6 | SSG4407PE |
SeCoS |
P-Channel Mode Power MOSFET | |
7 | SSG4410 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSG4410N-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
9 | SSG4423 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
10 | SSG4424 |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
11 | SSG4435 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
12 | SSG4472N |
SeCoS |
N-Channel Enhancement Mode Power MosFET |