These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technolo.
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize 13’ inch
SOP-8
B
A HG
LD M
C
JK F
N E
REF.
A B C D E F G
Millimeter
Min. Max.
5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25
1.27 TYP.
REF.
H J K L M N
Millime.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG4394N |
SeCoS Halbleitertechnologie |
N-Channel Enhancement Mode Power MOSFET | |
2 | SSG4396N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
3 | SSG4362N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SSG4224 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
5 | SSG4226 |
SeCoS |
N-Channel MOSFET | |
6 | SSG4228 |
SeCoS |
Dual-N Enhancement Mode Power MOSFET | |
7 | SSG42N60 |
Solid States Devices |
50 AMP 600 VOLTS FAST POWER IGBT | |
8 | SSG4401P |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
9 | SSG4402N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
10 | SSG4403 |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
11 | SSG4406F-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
12 | SSG4407 |
SeCoS |
P-Channel Enhancement Mode Power MosFET |