& FEATURES z The SSG4226 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. z Simple Drive Requirement z Lower On-resistance z Dual N MOSFET Package PACKAGE INFORMATION Weight: 0.07936g MARKING CODE D1 D1 D2 D2 4226SS 1 S1 G1 S2 G2 = Date Code 2 Gate1 Drain1 78 4 Gate2 .
z The SSG4226 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. z Simple Drive Requirement z Lower On-resistance z Dual N MOSFET Package PACKAGE INFORMATION Weight: 0.07936g MARKING CODE D1 D1 D2 D2 4226SS 1 S1 G1 S2 G2 = Date Code 2 Gate1 Drain1 78 4 Gate2 1 Source1 Drain2 56 3 Source2 SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG4224 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SSG4228 |
SeCoS |
Dual-N Enhancement Mode Power MOSFET | |
3 | SSG42N60 |
Solid States Devices |
50 AMP 600 VOLTS FAST POWER IGBT | |
4 | SSG4362N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
5 | SSG4390N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
6 | SSG4394N |
SeCoS Halbleitertechnologie |
N-Channel Enhancement Mode Power MOSFET | |
7 | SSG4396N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
8 | SSG4401P |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
9 | SSG4402N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
10 | SSG4403 |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
11 | SSG4406F-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
12 | SSG4407 |
SeCoS |
P-Channel Enhancement Mode Power MosFET |