These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(.
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize 13’ inch
SOP-8
B
A HG
LD M
C
JK F
N E
REF.
A B C D E F G
Millimeter
Min. Max.
5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter
Min. Max.
0.35 0.49 0.375 REF.
45° 1.35 1.75 0.10 0.25
0.25 REF.
SD SD SD GD
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG4401P |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
2 | SSG4403 |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
3 | SSG4406F-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SSG4407 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
5 | SSG4407J-C |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
6 | SSG4407PE |
SeCoS |
P-Channel Mode Power MOSFET | |
7 | SSG4410 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSG4410N-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
9 | SSG4423 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
10 | SSG4424 |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
11 | SSG4435 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
12 | SSG4472N |
SeCoS |
N-Channel Enhancement Mode Power MosFET |