These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(.
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize 13’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
Operating Junction & Storage Temperature Range
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG4390N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SSG4394N |
SeCoS Halbleitertechnologie |
N-Channel Enhancement Mode Power MOSFET | |
3 | SSG4396N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
4 | SSG4224 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
5 | SSG4226 |
SeCoS |
N-Channel MOSFET | |
6 | SSG4228 |
SeCoS |
Dual-N Enhancement Mode Power MOSFET | |
7 | SSG42N60 |
Solid States Devices |
50 AMP 600 VOLTS FAST POWER IGBT | |
8 | SSG4401P |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
9 | SSG4402N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
10 | SSG4403 |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
11 | SSG4406F-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
12 | SSG4407 |
SeCoS |
P-Channel Enhancement Mode Power MosFET |