SSC8124GSB - AFSEMI

SSC8124GSB N-Channel Enhancement Mode MOSFET

This device is produced with high cell density DMOS Top View DD trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small 1D D outline .

Features

VDS VGS RDSon TYP 22mR@4V5 ID
 Applications
 Load Switch
 Portable Devices
 DCDC Conversion 20V ±8V 25mR@2V5 32mR@1V8 5.6A
 Pin configuration
 General Description This device is produced with high cell density DMOS Top View DD trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small 1D D outline surface mount package. Excellent thermal and electrical capab.