SSC8120GS8 - AFSEMI

SSC8120GS8 N-Channel Enhancement Mode MOSFET

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Package Information Applications  Replace Digital Transistor  Battery Operated Systems .

Features

 VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5 0.8A 1.2K 850mR@1V8
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 General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
 Package Information Applications
 Replace Digital Transistor
 Battery Operated Systems
 Power Supply Converter Circuits
 Load/Power Switching Cell Phones, Pagers Pin Configuration Top View DD 33 12 GS 1 S Package.