SSC8124GT8 - AFSEMI

SSC8124GT8 N-Channel Enhancement Mode MOSFET

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface .

Features

VDS VGS RDSon TYP 22mR@4V5 ID
 Applications
 Load Switch
 Portable Devices
 DCDC Conversion 20V ±8V 25mR@2V5 32mR@1V8 9A
 Pin Configuration
 General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
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