SSC8125GS6 - AFSEMI

SSC8125GS6 P-Channel Enhancement Mode MOSFET

This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.  Package Information GS ③ ①② SOT23 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8125GS.

Features

VDS VGS -20V ±8V RDSon TYP 36mR@-4V5 45mR@-2V5 57mR@-1V8 66mR@-1V5 ID ESD -4A 3kV
 Applications
 Load Switch
 Portable Devices
 DCDC Conversion
 Pin configuration Top View D
 General Description This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.
 Package Information GS ③ ①② SOT23 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8125GS6
 Absolute Maximum Ratings @ T.