SSC8121GN1 - AFSEMI

SSC8121GN1 P-Channel Enhancement Mode MOSFET

This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount pack.

Features

VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±8V 190mR@-2V5 -1.0A 255mR@-1V8
⚫ General Description This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
⚫ Package Information
⚫ Applications ➢ Load Switch ➢ Portable Devices ➢ DCDC conversion
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