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SSC8124GSB |
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| Part Number | SSC8124GSB |
| Manufacturer | AFSEMI |
| Description | This device is produced with high cell density DMOS Top View DD trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications... |
| Features |
VDS VGS
RDSon TYP 22mR@4V5
ID
Applications Load Switch Portable Devices DCDC Conversion 20V ±8V 25mR@2V5 32mR@1V8 5.6A Pin configuration General Description This device is produced with high cell density DMOS Top View DD trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small 1D D outline surface mount package. Excellent thermal and electrical capab... |
| Document |
 SSC8124GSB Data Sheet
PDF 112.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSC8124GS6B |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8124GT3 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8124GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8120GN1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8120GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|