This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications Load Switch Portable Devices DCDC Conversion Pin configuration Top Vi.
VDS 20V
VGS ±12V
RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8
ID 1.2A
ESD 1.2K
General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications
Load Switch
Portable Devices
DCDC Conversion
Pin configuration
Top View
Package Information
③ ①②
SOT23 Unit:mm
SSC-V1.0
http://www.afsemi.com
1/4
Analog Future
SSC8120GS6
Absolute Maximum Ratings.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8120GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8120GS9 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8120GN1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8121GN1 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
5 | SSC8124GS6B |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
6 | SSC8124GSB |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
7 | SSC8124GT3 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
8 | SSC8124GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
9 | SSC8125GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
10 | SSC8125GS6A |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
11 | SSC8128GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
12 | SSC8129GQ4 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |