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SSC8121GN1 |
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| Part Number | SSC8121GN1 |
| Manufacturer | AFSEMI |
| Description | This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as por... |
| Features |
VDS VGS RDSon TYP
ID
150mR@-4V5
-20V ±8V 190mR@-2V5 -1.0A
255mR@-1V8
⚫ General Description This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities. ⚫ Package Information ⚫ Applications ➢ Load Switch ➢ Portable Devices ➢ DCDC conversion ⚫ ... |
| Document |
 SSC8121GN1 Data Sheet
PDF 141.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSC8120GN1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8120GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8120GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8120GS9 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8124GS6B |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|