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SSC8120GS6 |
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| Part Number | SSC8120GS6 |
| Manufacturer | AFSEMI |
| Description | This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery ... |
| Features |
VDS 20V
VGS ±12V
RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8
ID 1.2A
ESD 1.2K
General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications Load Switch Portable Devices DCDC Conversion Pin configuration Top View Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.com 1/4 Analog Future SSC8120GS6 Absolute Maximum Ratings... |
| Document |
 SSC8120GS6 Data Sheet
PDF 170.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSC8120GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8120GS9 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8120GN1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8121GN1 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8124GS6B |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|