Pin configuration This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Package Information Package:DFN3X2 SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8036GN3 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Pa.
Applications
VDS 30V
VGS ±20V
RDSon TYP 21mR@10V 32mR@4V5
ID 8.5A
Load Switch
Portable Devices
DCDC conversion
General Description
Pin configuration
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Package Information
Package:DFN3X2
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC8036GN3
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current Total .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8036GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8036GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8036GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8036GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
5 | SSC8036GS6B |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
6 | SSC8036GSD |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
7 | SSC8036GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
8 | SSC8030GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
9 | SSC8030GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
10 | SSC8030GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
11 | SSC8030GT4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
12 | SSC8030GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |