SSC8036GS6 - AFSEMI

SSC8036GS6 N-Channel Enhancement Mode MOSFET

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin configuration Top View D 3  Package Information 12 GS ③ ①② SOT23 Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog.

Features

 VDS 30V VGS ±20V RDSon TYP 24mR@10V 36mR@4V5 ID 6A
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 General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications
 Load Switch
 Portable Devices
 DCDC conversion Pin configuration Top View D 3
 Package Information 12 GS ③ ①② SOT23 Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8036GS6
 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuo.