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SSC8036GN3 |
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| Part Number | SSC8036GN3 |
| Manufacturer | AFSEMI |
| Description | Pin configuration This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Package ... |
| Features |
Applications VDS 30V VGS ±20V RDSon TYP 21mR@10V 32mR@4V5 ID 8.5A Load Switch Portable Devices DCDC conversion General Description Pin configuration This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Package Information Package:DFN3X2 SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8036GN3 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current Total ... |
| Document |
 SSC8036GN3 Data Sheet
PDF 159.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSC8036GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8036GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8036GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8036GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8036GS6B |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|