This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications Load Switch Portable Devices DCDC conversion Pin configuration Top View DD S Package Information 1D D G SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8036GSD .
VDS 30V
VGS ±20V
RDSon TYP 39mR@10V 76mR@4V5
ID 4.5A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices
DCDC conversion
Pin configuration
Top View
DD
S
Package Information
1D D G
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC8036GSD
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8036GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8036GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8036GS6B |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8036GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
5 | SSC8036GN3 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
6 | SSC8036GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
7 | SSC8036GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
8 | SSC8030GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
9 | SSC8030GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
10 | SSC8030GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
11 | SSC8030GT4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
12 | SSC8030GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |