SSC8036GS1 - AFSEMI

SSC8036GS1 N-Channel Enhancement Mode MOSFET

 Pin configuration This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8036GS1  Absolute Maximum Ratings @ TA = 25°C unless otherwise.

Features

 Applications VDS 30V VGS ±20V RDSon TYP 20mR@10V 30mR@4V5 ID 8.5A
 Load Switch
 Portable Devices
 DCDC conversion
 General Description
 Pin configuration This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
 Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8036GS1
 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain .