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SSC8027GS6 |
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| Part Number | SSC8027GS6 |
| Manufacturer | AFSEMI |
| Description | Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications s... |
| Features |
VDS -20V
VGS ±8V
RDSon TYP 100mR@-4V5 119mR@-2V5
ID -2A
Applications Load Switch Portable Devices DCDC conversion Pin Configuration General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities. Packa... |
| Document |
 SSC8027GS6 Data Sheet
PDF 222.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSC8020GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8020GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8020GS9 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8022GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8023GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|