Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP11N60S5 SPI11N60S5 VDS RDS(on) ID 600 V 0.38 Ω 11 A PG-TO262 PG-TO220 2 P-TO220-3-1 23 1 Type SPP11N60S5 SPI11N60S5 Package PG-TO220 .
1 2009-11-30 SPP11N60S5 SPI11N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol RthJC RthJA RthJA Tsold Values Unit min. typ. max. - - 1 K/W - - 62 - - 62 - 35 - - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise sp.
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP11N60C2 |
Infineon Technologies |
Power Transistor | |
2 | SPP11N60C3 |
Infineon Technologies |
Power Transistor | |
3 | SPP11N60C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPP11N60CFD |
Infineon Technologies |
Power Transistor | |
5 | SPP11N60CFD |
INCHANGE |
N-Channel MOSFET | |
6 | SPP11N65C3 |
Infineon Technologies |
Power Transistor | |
7 | SPP11N65C3 |
INCHANGE |
N-Channel MOSFET | |
8 | SPP11N80C3 |
Infineon Technologies |
Power Transistor | |
9 | SPP11N80C3 |
INCHANGE |
N-Channel MOSFET | |
10 | SPP100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
11 | SPP100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
12 | SPP100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor |