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isc N-Channel MOSFET Transistor SPP11N60C3，ISPP11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·.
·Static drain-source on-resistance:
RDS(on) ≤0.38Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Ultra low gate charge
·High peak current capability
·Improved transconductance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
11
IDM
Drain Current-Single Pulsed
33
PD
Total Dissipation @TC=25℃
125
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-5.
SPP11N60C3 - Infineon Technologies
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP11N60C2 |
Infineon Technologies |
Power Transistor |
|
| 2 | SPP11N60CFD |
Infineon Technologies |
Power Transistor |
|
| 3 | SPP11N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPP11N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPP11N60S5 |
Infineon Technologies |
Power Transistor |
|
| 6 | SPP11N65C3 |
Infineon Technologies |
Power Transistor |
|
| 7 | SPP11N65C3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | SPP11N80C3 |
Infineon Technologies |
Power Transistor |
|
| 9 | SPP11N80C3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | SPP100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 11 | SPP100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 12 | SPP100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor |
|