and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
di/dt=200A/µs, Tjmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Char.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
2 | SPP100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
3 | SPP100N04S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPP100N06S2-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPP100N06S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPP100N08S2-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
7 | SPP100N08S2L-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
8 | SPP1013 |
SYNC POWER |
P-Channel MOSFET | |
9 | SPP1015 |
SYNC POWER |
P-Channel MOSFET | |
10 | SPP1021 |
SYNC POWER |
Dual P-Channel MOSFET | |
11 | SPP1023 |
SYNC POWER |
Dual P-Channel MOSFET | |
12 | SPP1027 |
SYNC POWER |
Dual P-Channel MOSFET |