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SPP11N60S5 |
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| Part Number | SPP11N60S5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum L... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 22 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A... |
| Document |
 SPP11N60S5 Data Sheet
PDF 232.53KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP11N60S5 |
Infineon Technologies |
Power Transistor |
|
| 2 | SPP11N60C2 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPP11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPP11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPP11N60CFD |
Infineon Technologies |
Power Transistor |
|