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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N80C3 ·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=2.
·Ultra low effective capacitances
·Low gate charge
·Improved transconductance
·Low gate drive power loss
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
11 7.1
33
PD
Total Dissipation
156
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL.
SPP11N80C3 - Infineon Technologies
and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information o.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP11N60C2 |
Infineon Technologies |
Power Transistor |
|
| 2 | SPP11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPP11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPP11N60CFD |
Infineon Technologies |
Power Transistor |
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| 5 | SPP11N60CFD |
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N-Channel MOSFET |
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| 6 | SPP11N60S5 |
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N-Channel MOSFET |
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| 7 | SPP11N60S5 |
Infineon Technologies |
Power Transistor |
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| 8 | SPP11N65C3 |
Infineon Technologies |
Power Transistor |
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| 9 | SPP11N65C3 |
INCHANGE |
N-Channel MOSFET |
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| 10 | SPP100N03S2-03 |
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| 11 | SPP100N03S2L-03 |
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OptiMOS Power-Transistor |
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| 12 | SPP100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor |
|