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SPP11N60S5 |
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| Part Number | SPP11N60S5 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr... |
| Features |
1
2009-11-30
SPP11N60S5 SPI11N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Symbol dv/dt
Value 20
Unit V/ns
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s
Symbol
RthJC RthJA RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
62
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise sp... |
| Document |
 SPP11N60S5 Data Sheet
PDF 472.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP11N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPP11N60C2 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPP11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPP11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPP11N60CFD |
Infineon Technologies |
Power Transistor |
|