SPP11N65C3 - Infineon Technologies

SPP11N65C3 Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance SPP11N65C3,SPA11N65C3 SPI11N65C3 PG-TO262 V DS RDS(on) ID 650 V 0.38 Ω 11 A PG-TO220FP PG-TO220 Type SPP11N65C3 SPA11N65C3 SPI11N65C3 Package .

Features

Unit A A mJ 0.6 0.6 4 4 A ±20 ±20 V ±30 ±30 125 33 W -55...+150 °C Rev. 2.91 Page 1 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol dv/.