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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor SPA15N65C3 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
·With TO-220F package
·Low input capacitance and gate charge
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
INCHANGE Semiconductor
SPA15N65C3
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±30
15 9.4
45
PD
Total Dissipation @TC=25℃
34
Tj
Max. Operating Junction Temperature
150
Tstg
S.
SPA15N65C3 - Infineon Technologies
SPA15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability •.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA15N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPA15N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPA15N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPA1526Z |
RFMD |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER |
|
| 5 | SPA1118Z |
RF Micro Devices |
POWER AMPLIFIER |
|
| 6 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 7 | SPA11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 8 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor |
|
| 10 | SPA11N60C3E8185 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | SPA11N60CFD |
Infineon Technologies |
CoolMOS Power Transistor |
|
| 12 | SPA11N60CFD |
INCHANGE |
N-Channel MOSFET |
|