SPA11N60C3 - Infineon Technologies

SPA11N60C3 Power Transistor

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-TO-220-3-31;-3-111: Ful.

Features

z) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt 11 111) 7 71) 33 33 340 340 0.6 0.6 11 11 ±20 ±20 ±30 ±30 125 33 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.3 Page 1 2018-02-09 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, lead.