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SPA15N65C3 |
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| Part Number | SPA15N65C3 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | SPA15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; ... |
| Features |
• Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC PG-TO220-3-31 Type SPA15N65C3 Package PG-TO220-3-31 Marking 15N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) I D,pulse E AS E AR T C=25 °C I D=3 A, V DD=50 V I D=5 A, V DD=50 V... |
| Document |
 SPA15N65C3 Data Sheet
PDF 355.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA15N65C3 |
INCHANGE |
N-Channel MOSFET |
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| 2 | SPA15N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
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| 3 | SPA15N60C3 |
INCHANGE |
N-Channel MOSFET |
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| 4 | SPA15N60CFD |
INCHANGE |
N-Channel MOSFET |
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| 5 | SPA1526Z |
RFMD |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER |
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