SPA1118Z - RF Micro Devices

SPA1118Z POWER AMPLIFIER

RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed fo.

Features

 High Linearity Performance
 +21dBm IS-95 Channel Power at -55dBc ACP
 +48dBm OIP3 Typ.
 On-Chip Active Bias Control
 Patented High Reliability GaAs HBT Technology
 Surface-Mountable Plastic Package Applications
 Multi-Carrier Applications
 AMPS, ISM Applications Parameter Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power Small Signal Gain Input VSWR Output Third Order Intercept Point Noise Figure Device Current Device Voltage Thermal Resistance (junction-lead) Test Conditions: Z0=50 VCC=5V Specification Min. Typ. 810 29.5 -57.0 16.2 17.2 1.5:1 48.