SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated p.
e diode dv/dt 6) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 15 151) 9.4 9.41) 45 45 460 460 Unit A A mJ 0.8 0.8 15 15 ±20 ±20 ±30 ±30 156 34 -55...+150 15 A V W °C V/ns Rev. 3.2 page 1 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 15 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wavesolde.
isc N-Channel MOSFET Transistor SPA15N60C3 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.28Ω@10V ·Fast Switching.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA15N60CFD |
INCHANGE |
N-Channel MOSFET | |
2 | SPA15N65C3 |
Infineon Technologies |
Power Transistor | |
3 | SPA15N65C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPA1526Z |
RFMD |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER | |
5 | SPA1118Z |
RF Micro Devices |
POWER AMPLIFIER | |
6 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
7 | SPA11N60C3 |
Infineon Technologies |
Power Transistor | |
8 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET | |
9 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor | |
10 | SPA11N60C3E8185 |
INCHANGE |
N-Channel MOSFET | |
11 | SPA11N60CFD |
Infineon Technologies |
CoolMOS Power Transistor | |
12 | SPA11N60CFD |
INCHANGE |
N-Channel MOSFET |