RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the fi.
an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET
InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS
ACP versus Channel Power, Over Frequency,
-35.0
WCDMA
880MHz
-40.0
1960MHz 2140MHz
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0
POUT (dBm)
Features
P1dB=32dBm @ 2140MHz
ACP=-65dBc with 18.4dBm
Channel Power @ 2140MHz
Low Thermal Re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA15N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPA15N60C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPA15N60CFD |
INCHANGE |
N-Channel MOSFET | |
4 | SPA15N65C3 |
Infineon Technologies |
Power Transistor | |
5 | SPA15N65C3 |
INCHANGE |
N-Channel MOSFET | |
6 | SPA1118Z |
RF Micro Devices |
POWER AMPLIFIER | |
7 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
8 | SPA11N60C3 |
Infineon Technologies |
Power Transistor | |
9 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET | |
10 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor | |
11 | SPA11N60C3E8185 |
INCHANGE |
N-Channel MOSFET | |
12 | SPA11N60CFD |
Infineon Technologies |
CoolMOS Power Transistor |