and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, c.
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC0) for target applications
Product Summary V DS R DS(on),max I D1) 600 0.44 11 V Ω A
PG-TO220-3-31
Type SPA11N60CFD
Package TO-220-3-31
Ordering Code SP000216317
Marking 11N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1)
www.DataSheet4U.com
Symbol Conditions ID T C=25 °C T C=100 °C.
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input r.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPA11N60C3 |
Infineon Technologies |
Power Transistor | |
3 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor | |
5 | SPA11N60C3E8185 |
INCHANGE |
N-Channel MOSFET | |
6 | SPA11N65C3 |
INCHANGE |
N-Channel MOSFET | |
7 | SPA11N65C3 |
Infineon Technologies |
Power Transistor | |
8 | SPA11N80C3 |
Infineon Technologies |
Power Transistor | |
9 | SPA11N80C3 |
INCHANGE |
N-Channel MOSFET | |
10 | SPA1118Z |
RF Micro Devices |
POWER AMPLIFIER | |
11 | SPA12N50C3 |
INCHANGE |
N-Channel MOSFET | |
12 | SPA12N50C3 |
Infineon Technologies |
Power Transistor |