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SPA1526Z |
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| Part Number | SPA1526Z |
| Manufacturer | RFMD |
| Description | RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD f... |
| Features |
an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET
InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS
ACP versus Channel Power, Over Frequency,
-35.0
WCDMA
880MHz
-40.0
1960MHz 2140MHz
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0
POUT (dBm)
Features
P1dB=32dBm @ 2140MHz ACP=-65dBc with 18.4dBm Channel Power @ 2140MHz Low Thermal Re... |
| Document |
 SPA1526Z Data Sheet
PDF 573.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA15N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPA15N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPA15N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPA15N65C3 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPA15N65C3 |
INCHANGE |
N-Channel MOSFET |
|