SMS2020 - SeCoS Halbleitertechnologie

SMS2020 N-Channel MOSFET

The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. 1 SOT-23 A 3 3 L Top View 2 C B 1 2 MECHANICAL DATA     K E D Trench Technology Supper high density cell .

Features

e Gate
  – Source Voltage Continuous Drain Current 1 Power Dissipation 1 Continuous Drain Current 2 Power Dissipation 2 Pulsed Drain Current 3 Maximum Junction-to-Lead Operating Junction & Storage Temperature Range TA= 25°C TA= 70°C TA= 25°C TA= 70°C TA= 25°C TA= 70°C TA= 25°C TA= 70°C Symbol VDS VGS ID PD ID PD IDM RθJL TJ, TSTG Rating 10S 20 ±6 0.9 0.72 0.38 0.24 0.79 0.63 0.29 0.19 1.4 260 150, -55~150 0.83 0.66 0.32 0.2 0.71 0.57 0.24 0.15 Steady State Unit V V A W A W A °C / W °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-May-2013 Rev..