The device uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for the use as a load switch or in PWM applications. FEATURES High power and current handing capability Lead free product is available Surface mount package SOT-23 A L 3 Top View CB 12 KE 1 D .
High power and current handing capability Lead free product is available Surface mount package SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J APPLICATIONS PWM applications Load switch Power management REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 1.7 0.89 1.3 1.70 2.3 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.01 0.18 0.5 Typ. 0.08 0.20 0.6 REF. 0.95 BSC. MARKING 2305 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Continuous .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMS2301 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
2 | SMS2301-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
3 | SMS2301Y-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
4 | SMS2303-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
5 | SMS2310 |
SeCoS |
N-Channel MOSFET | |
6 | SMS2312 |
SeCoS |
N-Channel MOSFET | |
7 | SMS2321 |
SeCoS |
P-Channel MOSFET | |
8 | SMS2333 |
SeCoS |
P-Channel MOSFET | |
9 | SMS2001-C |
SeCoS |
P-Channel MOSFET | |
10 | SMS2002-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
11 | SMS2009E-C |
SeCoS |
N-Channel MOSFET | |
12 | SMS201 |
MA-COM |
Silicon Schottky Diode |