SMS2009E-C - SeCoS

SMS2009E-C N-Channel MOSFET

The SMS2009E-C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. FEATURES Reliable and Rugged Green Device Available ESD Protection MARKING W28 = Date Code PACKAGE INFORMATION.

Features

Reliable and Rugged Green Device Available ESD Protection MARKING W28 = Date Code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 3.00 1.20 1.80 0.89 1.3 1.70 2.3 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF. 0.08 0.26 0.6 REF. 0.95 BSC. ORDER INFORMATION Part Number Type SMS2009E-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1, VGS=4.5V Pulsed Drain Cu.