The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It has a high cutoff frequency and can be used up to 18 GHz and power detection up to 10 dBm. Rev. V1 Case 0503 - Molded Plastic DFN Package Electrical Specifications: TA = +25°C Parameter Test Conditions Units Min. Breakdown Volta.
Small Footprint, only 50 x 30 mils.
Simplest Broadband Detector as no DC bias
Required
Very Low Barrier Height, Good Sensitivity,
-54 dBm, also Low Flick Noise
Very Low Parasitic Package Inductance and Low
Package Capacitance
RoHS
* Compliant
Description
The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It has a high cutoff frequency and can be used up to 18 GHz and power detection up to 10 dBm.
Rev. V1
Case 0503 - Molded Plastic DFN Package
Electrical Specifications: TA = +25°C
Parameter
Test Conditions
Uni.
2 (0503) Molded Plastic DFN Package Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMS2001-C |
SeCoS |
P-Channel MOSFET | |
2 | SMS2002-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
3 | SMS2009E-C |
SeCoS |
N-Channel MOSFET | |
4 | SMS201 |
MA-COM |
Silicon Schottky Diode | |
5 | SMS2012-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
6 | SMS2020 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
7 | SMS2301 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
8 | SMS2301-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
9 | SMS2301Y-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
10 | SMS2303-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
11 | SMS2305R |
SeCoS |
P-Channel MOSFET | |
12 | SMS2310 |
SeCoS |
N-Channel MOSFET |