The SMS2001-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2001-C meet the RoHS and Green Product requirement with full function reliability approved. K FEATURES Advanced High Cell Density Trench Techn.
Advanced High Cell Density Trench Technology Super Low Gate Charge F SOT-23 A L 3 Top View CB 1 1 2 E D G H 3 2 J MARKING 2001 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2001-C Lead (Pb)-free and Halogen-free REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 1.7 0.89 1.3 1.70 2.3 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF. 0.08 0.20 0.6 REF. 0.95 BSC. 1 3 2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMS2002-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SMS2009E-C |
SeCoS |
N-Channel MOSFET | |
3 | SMS201 |
MA-COM |
Silicon Schottky Diode | |
4 | SMS2012-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
5 | SMS202 |
MA-COM |
Silicon Schottky Diode | |
6 | SMS202 |
Aeroflex |
Silicon Schottky Diodes | |
7 | SMS2020 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
8 | SMS2301 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
9 | SMS2301-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
10 | SMS2301Y-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
11 | SMS2303-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
12 | SMS2305R |
SeCoS |
P-Channel MOSFET |