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SMS2020 |
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| Part Number | SMS2020 |
| Manufacturer | SeCoS Halbleitertechnologie |
| Description | The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-D... |
| Features |
e Gate – Source Voltage Continuous Drain Current 1 Power Dissipation 1 Continuous Drain Current 2 Power Dissipation 2 Pulsed Drain Current 3 Maximum Junction-to-Lead Operating Junction & Storage Temperature Range TA= 25°C TA= 70°C TA= 25°C TA= 70°C TA= 25°C TA= 70°C TA= 25°C TA= 70°C Symbol VDS VGS ID PD ID PD IDM RθJL TJ, TSTG Rating 10S 20 ±6 0.9 0.72 0.38 0.24 0.79 0.63 0.29 0.19 1.4 260 150, -55~150 0.83 0.66 0.32 0.2 0.71 0.57 0.24 0.15 Steady State Unit V V A W A W A °C / W °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-May-2013 Rev.... |
| Document |
 SMS2020 Data Sheet
PDF 554.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SMS202 |
MA-COM |
Silicon Schottky Diode |
|
| 2 | SMS202 |
Aeroflex |
Silicon Schottky Diodes |
|
| 3 | SMS2001-C |
SeCoS |
P-Channel MOSFET |
|
| 4 | SMS2002-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 5 | SMS2009E-C |
SeCoS |
N-Channel MOSFET |
|