The SMS2301 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide Excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2301 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology .
Advanced High Cell Density Trench Technology Super low Gate Charge Green Device Available MARKING S1 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View C B 1 1 2 K E 3 2 D F G H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 1.7 0.89 1.3 1.70 2.3 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF. 0.08 0.20 0.6 REF. 0.95 BSC. 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Continuous Gate-Source Voltage VGS Continuous Drain Current .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMS2301-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
2 | SMS2301Y-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
3 | SMS2303-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
4 | SMS2305R |
SeCoS |
P-Channel MOSFET | |
5 | SMS2310 |
SeCoS |
N-Channel MOSFET | |
6 | SMS2312 |
SeCoS |
N-Channel MOSFET | |
7 | SMS2321 |
SeCoS |
P-Channel MOSFET | |
8 | SMS2333 |
SeCoS |
P-Channel MOSFET | |
9 | SMS2001-C |
SeCoS |
P-Channel MOSFET | |
10 | SMS2002-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
11 | SMS2009E-C |
SeCoS |
N-Channel MOSFET | |
12 | SMS201 |
MA-COM |
Silicon Schottky Diode |