SI5936DU - Vishay

SI5936DU Dual N-Channel MOSFET

New Product Dual N-Channel 30-V (D-S) MOSFET Si5936DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.030 at VGS = 10 V 30 0.040 at VGS = 4.5 V ID (A)a 6 6 Qg (Typ.) 3.5 nC PowerPAK ChipFET Dual Marking Code CF XXX Lot Traceability and Date Code Part # Code 3.0 mm 1.8 mm Bottom View Ordering Information: Si5936DU-T1-GE3 (Lead (Pb)-fr.

Features

• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile
• 100 % Rg Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Network
• System Power DC/DC D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Contin.